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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHT170PT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SC-59) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) 1.7~2.1 0.3~0.51 CONSTRUCTION * N-Channel Enhancement 1.2~1.9 MARKING * AT 0.085~0.2 D 0.89~1.3 0.3~0.6 2.1~2.95 0~0.1 CIRCUIT 1G S 3 2 TA = 25C unless otherwise noted Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter CHT170PT Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) 20 40 500 800 300 -55 to 150 ID PD TJ,TSTG Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range mA mW C Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 417 K/W 2004-4 RATING CHARACTERISTIC CURVES ( CHT170PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSS I GSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 100 A VDS = 60 V, VGS = 0 V VGS = 15 V, VDS = 0 V VGS = 15 V, VDS = 0 V 60 70 1 +10 -10 V A A A ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) g FS Gate Threshold Voltage VDS = VGS, ID = -250 A 0.8 2.1 3.0 5 V Static Drain-Source On-Resistance VGS = 10 V, ID= 200 m A Forward Transconductance VDS = 10 V DS(on), ID = 200 m A 80 mS DYNAMIC CHARACTERISTICS Ciss Coss C rss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V DD = 25V ID = 0.5A , VGS = -10 V, RGEN = 50 VDS = 25 V, VGS = 0 V, f = 1.0 MHz 22 11 2.0 40 30 5 10 10 nS pF RATING CHARACTERISTIC CURVES ( CHT170PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 1.0 0V V G S = 10 V 9. 7 6 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current T J=25C I D , DRAIN-SOURCE CURRENT (A) 0.8 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 0.4 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 5 4 VG S = 5 . 0 V VG S = 1 0 V 3 2 0 .2 1 0 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 0 0.2 0.4 0.6 I D , DRA IN CURRENT (A) 0.8 1 Figure 3. On-Resistance Variation with Temperature 2.0 Figure 4. On-Resistance vs , Gate-Source Voltage 6 DRAIN-SOURCE ON-RESISTANCE VG S = 1 0 V ,ID=0.5uA R DS(on) , NO RMALIZED 1.5 DRAIN-SOURCE ON-RESISTANCE 5 R DS(ON) , NORMALIZED 4 1.0 VG S = 5 . 0 V ,ID=0.05A ID = 5 0 m A 3 ID=500mA 2 0.5 1 0 - 55 -30 -5 20 45 70 95 120 145 0 0 2 4 6 8 10 12 14 16 18 TJ , JUNCTION T EMPERATURE (C) V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Max Poewr Disspation vs Ambient Temperature PD,POWRE DISSPATION (mw) 350 300 250 200 150 100 50 0 0 25 100 150 50 75 125 TA , AMBIENT TEMPERATURE (C) 175 200 |
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